Number：

01097014

Download

PDF

Name：

梁元彰(Yuan-Chuang Liang)

Titles：

Associate professor

Author：

Yuan-Chuang Liang

Paper name：

Material characteristics of sputter-deposited Zr-dopend In2O3/ZnO heterostructures on sapphire (0001) substrates

Name of activity：

Thin Solid Films

Keywords：

Abstract：

5 wt% Zr-doped In₂O₃ (Zr-In₂O₃) films with thicknesses from 95 to 220 nm were grown on 90 nm-thick ZnO-buffered sapphire (0001) substrates by radio-frequency magnetron sputtering in an oxygen-deficient atmosphere. The dependence on thickness of the structural information and electrical properties of the Zr-In₂O₃ films on the ZnO-fuffered sapphire substrates was studied. The X-ray diffraction patterns show that the (002)-textured ZnO buffer-layer is a good template for the growth of the highly (222)-textured In₂O₃ films on the sapphire substrate. The surface of the Zr-In₂O₃ film becomes rougher as the film thickness increases, perhaps because of the formation of larger mounds on the film surface as the thickness of Zr-In₂O₃ increase. The carrier concentration increased markedly from 5.8 x 10²⁰ to 1.83 x 10²¹ cm^-3 with film thickness from 95 to 220 nm, because more growth-induced defects are formed in the thick Zr-In₂O₃ film. The large increase in the number of charge carriers and the improvement in the crystallinc quality in the film reduce the resistivity of the thicker Zr-In₂O₃ film.

Back