Number：

01097012

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Name：

梁元彰(Yuan-Chuang Liang)

Titles：

Associate professor

Author：

Yuan-Chuang Liang,Yung-Ching Liang

Paper name：

Physical Properties of low temperature sputtering-deposited zirconium-doped indium oxide films at various oxygen partial pressures

Name of activity：

Applied Physics A

Keywords：

Abstract：

The effects of oxygen content in the sputtering gas on the crystallographic and optoelectronic properties of 210 nm thick Zr-doped In₂O₃ (Zr- In₂O₃) films by rf magnetron sputtering were initially studied. The results of X-ray diffraction show that the Zr- In₂O₃ films grown on glass substrates exhibit mixed crystallographic orientations. Moreover, the Zr- In₂O₃ film grown in an Ar atmosphere promotes the appearance of crystallographic orientation of (222). The surface of the Zr- In₂O₃ film becomes rougher as the oxygen content in the sputtering gas decreases; the current images obtained by conductive atomic force microscopy reveal that the surfaces of the Zr- In₂O₃ films exhibit a distribution of coexisting conducting and nonconducting regions, and that the area of the nonconducting surface increases with the oxygen content in the sputtering gas. The resistivity is minimized to 3.51 x 10^-4 Ω cm whenthe Zr- In₂O₃ film is grown in an Ar atmosphere and the average transmittance in the visible light region is ~85%. The optical band gap decreases as the oxygen content in the sputtering gas increases.

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