Number：

01099007

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Name：

Chi-Chang Liu

Titles：

Assistant Professor

Author：

Chin-Chiuan Kuo、Chi-Chang Liu、Shao-Chih He、

Jing-Tang Cgang、Ju-Liang He

Paper name：

influence of assistantion bean on the optp-electrical properties of molybdenum doped zinc oxide films deposited on polyethersulfone via dualion beam sputtering

Name of activity：

Vacuum

Keywords：Ion beam-assisted deposition 、Molybdenum doped zinc oxide 、Electrical conductivity 、Optical properties

Abstract：

An alternative transparent conductive oxide, molybdenum doped zinc oxide (MZO) was deposited onto a flexible polyethersulfone (PES) substrate by using a dual ion beam sputtering system. One argon ion beam was used to sputter a MZO target and another assistant argon ion beam was for bombarding deposits simultaneously. The assistant ion source discharge voltage and current were changed respectively for investigating their influences on the conductivity of deposited MZO films. Changing the discharge voltage shows that, the film crystallinity, carrier concentration and mobility in films all increase with the discharge voltage and subsequently decrease when the applied voltage is over 100 V. Changing the discharge current also shows a similar trend. The film crystallinity and carrier concentration initlally increase with the discharge current, and thereafter a minimum for 1.4A, and a subsequent increase in resistivity is observed. According to the results, properly raising the discharge voltage and current of assistant ion source can improve both electrical conductivity and optical transparency of deposited MZO films, but the excess discharge voltage and current will cause the grain refinement which may retard the carrier mobility and result in the lower conductivity of MZO films.

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