論文名稱:

以氧化物電極備製電化學沈積氧化鋅薄膜結構特性之研究

Study on structural characterization of electrodeposited ZnO thin films on conductive oxide electrodes

研究生:

蔡茗宇

指導教授:

黃啟三

梁元彰

          學號:

97017009

畢業學年度:

98

      出版年:

民99

關鍵字:

電化學沉積 Electrodeposition

氧化鋅 Zinc oxide

氧化釕 RuO2

微結構 Nanostructure

摘要:

本研究是使用電化學沉積(electrodeposition)方式製做氧化鋅薄膜；首先於矽基板成長氧化釕(RuO2)薄膜作以氧化鋅薄膜沉積的基板，將RuO2薄膜利用磁控濺鍍方式濺鍍在矽基板上，再經由恆電位儀，在90°C的硝酸鋅水成溶液中成功的將ZnO薄膜成長於上，並透過X光繞射儀(XRD)與場發射式掃描式電子顯微鏡(FE-SEM)，對製備的ZnO薄膜進行晶體結構和表面形貌進行分析。

以濺鍍方式於RuO2/Si基板上沉積薄ZnO緩衝層，由實驗結果發現緩衝層有控制氧化鋅薄膜成長方向性的特性，達到電化學沉積電化學薄膜ZnO薄膜有較佳的(002)優選取向。

從實驗結果觀察出RuO2/Si基板所成長之ZnO薄膜在硝酸鋅溶液適當地控制其濃度與電化學沉積電流之後，可獲得各種不同ZnO薄膜微結構型態。

The synthesis of zinc oxide (ZnO) thin films were performed by electrodeposition in this work. RuO2 thin films were sputtered onto the Si (100) substrates for further electrodeposition of ZnO thin films. ZnO thin films were electrodeposited on RuO2-buffered Si substrates using zinc nitrate aqueous solution at 90°C. The crystal structure and surface morphology of the electrodeposited ZnO thin films were characterized by field emission scanning electron microscopy and x-ray diffraction.

The crystallographic orientations of electrodeposited ZnO thin films can be controlled by sputtering deposited an ultra-thin ZnO buffer layer  on the RuO2/Si substrates; the highly (002)-preferred ZnO thin films were electrodeposited on the ZnO-buffered RuO2/Si substrates. 

The experimental results show that ZnO thin films on RuO2/Si substrates with various morphologies can be obtained by adequate control of the zinc nitrate concentration and cathodic current.