論文名稱:

ITO/glass 與ITO/PES 為基板製作電化學ZnO 薄膜之

Study on fabrication of electrodeposited ZnO thin films on ITO/glass and ITO/PES substrates

研究生:

林學群

指導教授:

劉啟昌

          學號:

97017003

畢業學年度:

98

      出版年:

民99

關鍵字:

電化學 electrochemistry

氧化鋅 ZnO

銦錫氧化物 ITO

光學穿透率 Optical transmittance

摘要:

本論文利用離子束濺鍍系統以及射頻磁控濺鍍系統，在塑膠基板與玻璃基板上，濺鍍出一層透明銦錫氧化物，來形成透明導電基材，再以這基材利用電化學方式，配合各種不同實驗參數，沉積氧化鋅薄膜。另外，亦將玻璃基板於不同溫度下，退火來探討氧化鋅薄膜之結晶性，以及薄膜的光電特性。

研究結果顯示在未退火之下的氧化鋅薄膜，會隨電壓增強以及沉積時間延長之下，能有效的增強氧化鋅(002)繞射峰的強度，玻璃基板的氧化鋅薄膜，會隨著退火溫度的提升，結晶方向也會逐漸的趨向於氧化鋅(002)繞射峰發展。在光學特性方面，未退火之下的氧化鋅薄膜穿透率，會隨著電壓增強以及沉積時間的延長之下，則會有明顯的下降的趨勢，但玻璃基板的氧化鋅薄膜會隨著退火溫度的提升，整體薄膜穿透率也會隨著逐漸的提升。在-1V 與-1.3V 的沉積電壓與退火溫度在350℃時，膜穿透率可達至最高值。而沉積電壓-1.6V 之試片，則須將退火溫度提升至更高的溫度，才可得到最佳的薄膜穿透率。在薄膜電阻特性方面未退火之下的氧化鋅薄膜，會隨著電壓增強而使得薄膜電阻增大，然而玻璃基板在退火溫度的提升之下，沉積電壓-1.6V 的薄膜電阻也從184.57MΩ逐漸下降8.52kΩ。

Ion beam sputtering system and RF Magnetron Sputtering technique are used to produce an ITO thin film deposited on glass or plastic substrates to provide a transparent conductive substrate. Then use electrochemical methods together with a number of experimental parameters to produce a ZnO thin film deposited on such conductive substrate. Meanwhile, ZnO thin films on a glass substrate are annealed at different temperatures to investigate the crystallization and optical properties of the film.

The results of the study indicate that before annealing, ZnO thin films can effectively enhance the diffraction peak intensity of ZnO (002) with the increase of voltage and depositing time. With the increase of annealing temperature, crystal orientation of ZnO thin films deposited on a glass substrate gradually develops toward the diffraction peak of ZnO. With regard to optical properties, the transmittance of non-annealed ZnO thin films significantly reduces with the increase of voltage and depositing time. However, the transmittance of ZnO thin films deposited on a glass substrate gradually increases with the increase of annealing temperature. The transmittance of ZnO thin films reaches its maximum value at depositing voltage between -1V and 1.3V and at temperature of 350℃. At the depositing voltage of -1.6V, the sample shows that the annealing temperature must be increased in order to obtain an optimal transmission. The resistance of non-annealed ZnO thin films increases with the increase of voltage, while the resistance at -1.6V of ZnO thin films deposited on a glass substrate gradually decreases from 184.57MΩ to 8.52kΩ with the increase of annealing temperature.