論文名稱:

電化學沈積氧化鋅薄膜於銅金屬薄膜成長特性之研究

Growth characterization of electrodeposited ZnO thin film on copper thin film

研究生:

吳承哲

指導教授:

黃啟三

          學號:

97017002

畢業學年度:

98

      出版年:

民99

關鍵字:

銅金屬薄膜 copper thin film

氧化鋅 ZnO

電化學沉積 electrochemical deposition

顯微結構 microstructure

摘要:

本研究使用磁控濺鍍技術於矽基板上濺鍍銅金屬薄膜備製銅基板，再利用電化學沉積方式，探討氧化鋅薄膜之特性，針對銅金屬薄膜，進行各種電化學氧化鋅參數實驗，來了解氧化鋅薄膜，在銅薄膜基材上之結構演化性。

    實驗部分以電化學溶液濃度、電壓、溫度等參數，經由電化學沉積法沉積氧化鋅薄膜，以X光繞射分析儀與掃描式電子顯微鏡，來探討薄膜晶體結構與表面特性，再由Debey Scherrer 公式與織構公式，探討電化學沉積氧化鋅薄膜結構優劣。

    實驗中發現，有薄氧化鋅緩衝層之試片，有助於後續電化學成長之氧化鋅結晶成長，實驗結果得知，當薄膜成長溫度為90℃、硝酸鋅濃度0.02M且有薄氧化鋅緩衝層時，可獲得最佳的氧化鋅薄膜。

The study uses magnetron sputtering to produce a copper thin film deposited on silicon substrates to provide a copper thin film substrate. Then electrochemical methods are adopted to investigate the properties of ZnO thin films. Aiming to understand the ZnO thin film deposited on copper thin film substrate, the study conducts experiments on various electrochemical parameters of ZnO.

ZnO thin films are obtained via electrochemical deposition with controlled parameters such as concentration of electrochemical solution, voltage and temperature.

X-ray Diffraction and scanning electron microscope are employed to examine and observe the crystal structure and surface properties of the thin film. The structural advantages and disadvantages of ZnO thin films are determined using Debye-Scherrer formula and texture formula.

The findings of the experiment indicate that the presence of the ZnO buffer layer in the sample facilitates the crystal growth of ZnO, and optimal ZnO thin films can be obtained with temperature at 90oC, the concentration of zinc nitrate at 0.02M and with the presence of ZnO buffer layer.